CONSIDERATIONS TO KNOW ABOUT N TYPE GE

≤ 0.fifteen) is epitaxially grown on a SOI substrate. A thinner layer of Si is grown on this SiGe layer, after which you can the composition is cycled via oxidizing and annealing phases. Because of the preferential oxidation of Si around Ge [sixty eight], the original Si1–Publisher's Take note: Springer Nature remains neutral regarding jurisdic